Impact of the TiN layer thickness on the low-frequency noise and static device performance of n-channel MuGFETs

Rodrigues, MicheleMicheleRodriguesMercha, AbdelkarimAbdelkarimMerchaCollaert, NadineNadineCollaertSimoen, EddyEddySimoenClaeys, CorCorClaeysMartino, J.A.J.A.Martino2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/16111Impact of the TiN layer thickness on the low-frequency noise and static device performance of n-channel MuGFETsProceedings paper