Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200 degrees C

Sousa, Julia C. S.Julia C. S.SousaPerina, Welder F.Welder F.PerinaRangel, RobertoRobertoRangelSimoen, EddyEddySimoenVeloso, AnabelaAnabelaVelosoMartino, Joao A.Joao A.MartinoAgopian, Paula G. D.Paula G. D.Agopian2023-04-122022-05-272023-03-302023-04-1220220038-1101WOS:000793398000009https://imec-publications.be/handle/20.500.12860/39900Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200 degrees CJournal article10.1016/j.sse.2022.108238WOS:000793398000009ANALOGEFFICIENTCIRCUITS