Pourtois, GeoffreyGeoffreyPourtoisHoussa, MichelMichelHoussaDe Jaeger, BriceBriceDe JaegerLeys, FrederikFrederikLeysKaczer, BenBenKaczerMartens, KoenKoenMartensCaymax, MattyMattyCaymaxMeuris, MarcMarcMeurisGroeseneken, GuidoGuidoGroesenekenHeyns, MarcMarcHeyns2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12739A step towards a better understanding of silicon passivated (100) Ge p-channelProceedings paper