Patil, AbhaysinhaAbhaysinhaPatilKennes, KoenKoenKennesCuypers, DieterDieterCuypersChou, BiancaBiancaChouGeorgieva, VioletaVioletaGeorgievaSuhard, SamuelSamuelSuhardPodpod, ArnitaArnitaPodpodPhommahaxay, AlainAlainPhommahaxayMiller, AndyAndyMillerBan, YoojinYoojinBanFerraro, FilippoFilippoFerraroVan Campenhout, JorisJorisVan Campenhout2026-03-302026-03-302025979-8-3315-3782-12380-632Xhttps://imec-publications.be/handle/20.500.12860/58968Bonding dies to wafers can lead to voiding and non-bonded areas due to warpage. In this work, the maximum die-level warpage required to achieve a fully bonded and void-free interface for a given dielectric stack is evaluated. 100 μm thick dies were prepared on a temporary carrier and bonded to a wafer using a ‘wafer-to-wafer’-like bonding flow, a collective die-to-wafer, and a direct die-to-wafer flow. The method used and the forces involved during bonding, primarily determine the tolerance of die-level warpage to achieve a void-free bond.engProceedings paper10.1109/IITC66087.2025.11075472WOS:001554227600063