Solutions To Improve HBM ESD Robustness of GaN RF HEMTs

Sandupatla, AbhinayAbhinaySandupatlaChen, Shih-HungShih-HungChenMane, NikhilNikhilManeParvais, BertrandBertrandParvaisYu, HaoHaoYuPradhan, NilamNilamPradhanCollaert, NadineNadineCollaert2024-05-062023-11-302024-05-0620230739-5159WOS:001094864400024https://imec-publications.be/handle/20.500.12860/43203Solutions To Improve HBM ESD Robustness of GaN RF HEMTsProceedings paper978-1-58537-347-5WOS:001094864400024ELECTRON-MOBILITY