Charge Transport in GaN High Electron Mobility Transistor With Positive Substrate Bias

Huang, PengPengHuangSmith, Matthew D.Matthew D.SmithUren, Michael J.Michael J.UrenChen, ZequanZequanChenBakeroot, BenoitBenoitBakerootVohra, AnuragAnuragVohraDecoutere, StefaanStefaanDecoutereKuball, MartinMartinKuball2025-06-132025-06-132025-JUN 20018-9383WOS:001504196800001https://imec-publications.be/handle/20.500.12860/45797Charge Transport in GaN High Electron Mobility Transistor With Positive Substrate BiasJournal article10.1109/TED.2025.3571004WOS:001504196800001