P+/N junction formation in thin strain relaxed buffer strained silicon substrates: the effect of the junction anneal

Eneman, GeertGeertEnemanSimoen, EddyEddySimoenDelhougne, RomainRomainDelhougneVerheyen, PeterPeterVerheyenSimons, VeerleVeerleSimonsLoo, RogerRogerLooCaymax, MattyMattyCaymaxDe Meyer, KristinKristinDe MeyerVandervorst, WilfriedWilfriedVandervorstClaeys, CorCorClaeys2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10430P+/N junction formation in thin strain relaxed buffer strained silicon substrates: the effect of the junction annealProceedings paper