Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs

Paul, AbhijeetAbhijeetPaulTettamanzi, Giuseppe C.Giuseppe C.TettamanziLee, SunheeSunheeLeeMehrotra, SaumitraSaumitraMehrotraCollaert, NadineNadineCollaertBiesemans, SergeSergeBiesemansRogge, SvenSvenRoggeKlimeck, GerardGerardKlimeck2021-10-192021-10-1920110021-8979https://imec-publications.be/handle/20.500.12860/19552Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETsJournal article10.1063/1.3660697