High hole mobility SGOI substrates obtained by the Ge condensation technique

Souriau, LaurentLaurentSouriauNguyen, TuanTuanNguyenAugendre, EmmanuelEmmanuelAugendreLoo, RogerRogerLooTerzieva, ValentinaValentinaTerzievaCaymax, MattyMattyCaymaxCristoloveanu, SorinSorinCristoloveanuMeuris, MarcMarcMeurisVandervorst, WilfriedWilfriedVandervorst2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/14503High hole mobility SGOI substrates obtained by the Ge condensation techniqueProceedings paper