Gupta, SomyaSomyaGuptaVincent, BenjaminBenjaminVincentLin, DennisDennisLinGunji, M.M.GunjiFirrincieli, AndreaAndreaFirrincieliGencarelli, FedericaFedericaGencarelliMagyari-Kope, B.B.Magyari-KopeYang, B.B.YangDouhard, BastienBastienDouhardDelmotte, JorisJorisDelmotteFranquet, AlexisAlexisFranquetCaymax, MattyMattyCaymaxDekoster, JohanJohanDekosterNishi, Y.Y.NishiSaraswat, K.C.K.C.Saraswat2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/20765GeSn channel nMOSFETs: material potential and technological outlookProceedings paper