Advanced Ni-based FUlly SIlicidation (FUSI) technology for low-Vt CMOS devices

Yu, HongYuHongYuYuVeloso, AnabelaAnabelaVelosoLauwers, AnneAnneLauwersBiesemans, SergeSergeBiesemans2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/13254Advanced Ni-based FUlly SIlicidation (FUSI) technology for low-Vt CMOS devicesProceedings paper