Fundamental study of the apparent voltage-dependence of NBTI kinetics by constant electric field stress in Si and SiGe devices

Mukhopadhyay, SubhadeepSubhadeepMukhopadhyayFranco, JacopoJacopoFrancoVaisman Chasin, AdrianAdrianVaisman ChasinRoussel, PhilippePhilippeRousselKaczer, BenBenKaczerGroeseneken, GuidoGuidoGroesenekenHoriguchi, NaotoNaotoHoriguchiLinten, DimitriDimitriLintenThean, AaronAaronThean2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27051Fundamental study of the apparent voltage-dependence of NBTI kinetics by constant electric field stress in Si and SiGe devicesProceedings paper