Impact of crystal orientation on ohmic contact resistance of enhancement-mode pGaN gate high electron mobility transistors on 200 mm Si substrates

Van Hove, MarleenMarleenVan HovePosthuma, NielsNielsPosthumaGeens, KarenKarenGeensWellekens, DirkDirkWellekensLi, XiangdongXiangdongLiDecoutere, StefaanStefaanDecoutere2021-10-262021-10-2620180021-4922https://imec-publications.be/handle/20.500.12860/32066Impact of crystal orientation on ohmic contact resistance of enhancement-mode pGaN gate high electron mobility transistors on 200 mm Si substratesJournal articlehttps://doi.org/10.7567/JJAP.57.04FG02