Modelling of transconductance-to-current ratio (g(m)ID) analysis on double-gate SOI MOSFETs

Krishnasamy, RajendranRajendranKrishnasamySamudra, G. S.G. S.Samudra2021-10-142021-10-142000https://imec-publications.be/handle/20.500.12860/4683Modelling of transconductance-to-current ratio (g(m)ID) analysis on double-gate SOI MOSFETsJournal article