Effective work function engineering for aggressively scaled planar and multi-gate fin field-effect transistor-based devices with high-k last replacement metal gate technology

Veloso, AnabelaAnabelaVelosoChew, Soon AikSoon AikChewHiguchi, YuichiYuichiHiguchiRagnarsson, Lars-AkeLars-AkeRagnarssonSimoen, EddyEddySimoenSchram, TomTomSchramWitters, ThomasThomasWittersVan Ammel, AnnemieAnnemieVan AmmelDekkers, HaroldHaroldDekkersTielens, HildeHildeTielensDevriendt, KatiaKatiaDevriendtHeylen, NancyNancyHeylenSebaai, FaridFaridSebaaiBrus, StephanStephanBrusFavia, PaolaPaolaFaviaGeypen, JefJefGeypenBender, HugoHugoBenderPhatak, AnupAnupPhatakChen, M. S.M. S.ChenLu, X.X.LuGanguli, S.S.GanguliLei, YuYuLeiTang, W.W.TangFu, X.X.FuGandikota, S.S.GandikotaNoori, A.A.NooriBrand, A.A.BrandYoshida, N.N.YoshidaThean, AaronAaronTheanHoriguchi, NaotoNaotoHoriguchi2021-10-212021-10-2120130021-4922https://imec-publications.be/handle/20.500.12860/23315Effective work function engineering for aggressively scaled planar and multi-gate fin field-effect transistor-based devices with high-k last replacement metal gate technologyJournal articlehttp://jjap.jsap.jp/link?JJAP/52/04CA02/