On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices

Putcha, VamsiVamsiPutchaCheng, LiangLiangChengAlian, AliRezaAliRezaAlianZhao, MingMingZhaoLu, H.H.LuParvais, BertrandBertrandParvaisWaldron, NiamhNiamhWaldronLinten, DimitriDimitriLintenCollaert, NadineNadineCollaert2022-06-282021-11-022022-06-2820211541-7026WOS:000672563100050https://imec-publications.be/handle/20.500.12860/37684On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devicesProceedings paper10.1109/IRPS46558.2021.9405139978-1-7281-6893-7WOS:000672563100050ALGAN/GAN HEMTS