Vanhellemont, JanJanVanhellemontLauwaert, JohanJohanLauwaertChen, JiiaheJiiaheChenVrielinck, HenkHenkVrielinckRafi, Joan MarcJoan MarcRafiOhyama, HidenoriHidenoriOhyamaSimoen, EddyEddySimoenYang, DerenDerenYang2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/18239Impact of Ge doping on Si substrate and diode characteristicsProceedings paper