Influence of activation annealing and silicidation process on dopant redistribution and pile-up at the NixSiy/SiO2 interface

Kmieciak, MalgorzataMalgorzataKmieciakKittl, JorgeJorgeKittlJanssens, TomTomJanssensLauwers, AnneAnneLauwersVandervorst, WilfriedWilfriedVandervorstKottantharayil, AnilAnilKottantharayilSchram, TomTomSchramVeloso, AnabelaAnabelaVelosoVan Dal, MarkMarkVan DalMaex, KarenKarenMaexVantomme, AndreAndreVantomme2021-10-162021-10-162005-05https://imec-publications.be/handle/20.500.12860/10707Influence of activation annealing and silicidation process on dopant redistribution and pile-up at the NixSiy/SiO2 interfaceProceedings paper