Impact of high-k gate dielectrics on decananometer double-gate MOSFETs: gate-fringing field and parasitic charge effects

Munteanu, D.D.MunteanuAutran, J.L.J.L.AutranBescond, M.M.BescondHoussa, MichelMichelHoussa2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9331Impact of high-k gate dielectrics on decananometer double-gate MOSFETs: gate-fringing field and parasitic charge effectsProceedings paper