Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric

Simoen, EddyEddySimoenO'Sullivan, BarryBarryO'SullivanRonchi, NicoloNicoloRonchiVan den Bosch, GeertGeertVan den BoschLinten, DimitriDimitriLintenVan Houdt, JanJanVan Houdt2022-02-242022-02-2420212158-3226WOS:000609445500001https://imec-publications.be/handle/20.500.12860/39090Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectricJournal article10.1063/5.0029833WOS:000609445500001BORDER TRAPSRETENTION