Understanding the kinetics of Metal Induced Lateral Crystallization process to enhance the poly-Si channel quality and current conduction in 3-D NAND memory

Ramesh, SivaSivaRameshVadakupudhu Palayam, SenthilSenthilVadakupudhu PalayamAjaykumar, ArjunArjunAjaykumarOpsomer, KarlKarlOpsomerBastos, JoaoJoaoBastosRagnarsson, Lars-AkeLars-AkeRagnarssonBreuil, LaurentLaurentBreuilArreghini, AntonioAntonioArreghiniWouters, LennaertLennaertWoutersSpampinato, ValentinaValentinaSpampinatoFavia, PaolaPaolaFaviaNalin Mehta, AnkitAnkitNalin MehtaCarolan, PatrickPatrickCarolanNyns, LauraLauraNynsKatcko, KostantineKostantineKatckoStiers, JimmyJimmyStiersVan den Bosch, GeertGeertVan den BoschRosmeulen, MaartenMaartenRosmeulen2022-07-112022-07-092022-07-1120212380-9248WOS:000812325400074https://imec-publications.be/handle/20.500.12860/40081Understanding the kinetics of Metal Induced Lateral Crystallization process to enhance the poly-Si channel quality and current conduction in 3-D NAND memoryProceedings paper10.1109/IEDM19574.2021.9720571978-1-6654-2572-8WOS:000812325400074TEMPERATUREDEVICES