Controlled orientation of molecular-beam-epitaxial BaTiO3 on Si(001) using thickness engineering of BaTiO3 and SrTiO3 buffer layers

Hsu, MarkMarkHsuVan Thourhout, DriesDriesVan ThourhoutPantouvaki, MariannaMariannaPantouvakiMeersschaut, JohanJohanMeersschautConard, ThierryThierryConardRichard, OlivierOlivierRichardBender, HugoHugoBenderFavia, PaolaPaolaFaviaVila Santos, MariaMariaVila SantosCid Barreno, RosaliaRosaliaCid BarrenoRubio-Zuazo, JuanJuanRubio-ZuazoR. Castro, GermanGermanR. CastroVan Campenhout, JorisJorisVan CampenhoutAbsil, PhilippePhilippeAbsilMerckling, ClementClementMerckling2021-10-242021-10-242017-051882-0778https://imec-publications.be/handle/20.500.12860/28540Controlled orientation of molecular-beam-epitaxial BaTiO3 on Si(001) using thickness engineering of BaTiO3 and SrTiO3 buffer layersJournal articlehttp://iopscience.iop.org/article/10.7567/APEX.10.065501/meta