Predictive and prospective calibrated TCAD to improve device performances in sub-20 nm gate length p-FinFETs

Eyben, PierrePierreEybenDe Keersgieter, AnAnDe KeersgieterMatagne, PhilippePhilippeMatagneChiarella, ThomasThomasChiarellaPorret, ClémentClémentPorretHikavyy, AndriyAndriyHikavyySiew, Yong KongYong KongSiewGoux, LudovicLudovicGouxMitard, JeromeJeromeMitardHoriguchi, NaotoNaotoHoriguchi2025-07-032024-04-052025-07-0320240021-4922WOS:001186619100001https://imec-publications.be/handle/20.500.12860/43781Predictive and prospective calibrated TCAD to improve device performances in sub-20 nm gate length p-FinFETsJournal article10.35848/1347-4065/ad2a9dWOS:001186619100001GROWTH