Intrinsic switching behavior in HfO2 RRAM by fast electrical measurments on novel 2R test structures

Fantini, AndreaAndreaFantiniWouters, DirkDirkWoutersDegraeve, RobinRobinDegraeveGoux, LudovicLudovicGouxPantisano, LuigiLuigiPantisanoKar, Gouri SankarGouri SankarKarChen, YangyinYangyinChenGovoreanu, BogdanBogdanGovoreanuKittl, JorgeJorgeKittlAltimime, LaithLaithAltimimeJurczak, GosiaGosiaJurczak2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/20668Intrinsic switching behavior in HfO2 RRAM by fast electrical measurments on novel 2R test structuresProceedings paper