GIDL (gate-induced drain leakage) and parasitic Schottky barrier leakage elimination in aggressively scaled HfO2/TiN FiNFET devices

Hoffmann, Thomas Y.Thomas Y.HoffmannDoornbos, GerbenGerbenDoornbosFerain, IsabelleIsabelleFerainCollaert, NadineNadineCollaertZimmerman, PaulPaulZimmermanGoodwin, MichaelMichaelGoodwinRooyackers, RitaRitaRooyackersKottantharayil, AnilAnilKottantharayilYim, Yong SikYong SikYimDixit, AbhisekAbhisekDixitDe Meyer, KristinKristinDe MeyerJurczak, GosiaGosiaJurczakBiesemans, SergeSergeBiesemans2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10599GIDL (gate-induced drain leakage) and parasitic Schottky barrier leakage elimination in aggressively scaled HfO2/TiN FiNFET devicesProceedings paper