Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks

Xu, ZhenZhenXuHoussa, MichelMichelHoussaDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeyns2021-10-152021-10-152002https://imec-publications.be/handle/20.500.12860/7072Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacksJournal article