Ravsher, TarasTarasRavsherGarbin, DanieleDanieleGarbinFantini, AndreaAndreaFantiniDegraeve, RobinRobinDegraeveClima, SergiuSergiuClimaDonadio, Gabriele LucaGabriele LucaDonadioKundu, ShreyaShreyaKunduHody, HubertHubertHodyDevulder, WouterWouterDevulderVan Houdt, JanJanVan HoudtAfanas'ev, ValeriValeriAfanas'evDelhougne, RomainRomainDelhougneKar, Gouri SankarGouri SankarKar2023-07-052023-04-092023-04-222023-07-052023-050018-9383WOS:000953395100001https://imec-publications.be/handle/20.500.12860/41439Journal article10.1109/TED.2023.3252491WOS:000953395100001Applied physicsElectrical & electronic engineeringMaterials sciencePHASE-CHANGE MEMORYAmorphous ChalcogenidesOvonic Threshold Switch (OTS)Self-selective memoryCross-point arraySiGeAsSePolarity effectThreshold voltage