Electrical characterization of high-dielectric-constant/SiO2 metal-oxide-semiconductor gate stacks by a conductive atomic force microscope

Blasco, X.X.BlascoPorti, M.M.PortiNafria, M.M.NafriaPetry, JasmineJasminePetryVandervorst, WilfriedWilfriedVandervorst2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10109Electrical characterization of high-dielectric-constant/SiO2 metal-oxide-semiconductor gate stacks by a conductive atomic force microscopeJournal article