Impact of substrate resistivity on the vertical leakage, breakdown, and trapping in GaN-on-Si E-Mode HEMTs

Borga, MatteoMatteoBorgaMeneghini, MatteoMatteoMeneghiniStoffels, SteveSteveStoffelsLi, XiangdongXiangdongLiPosthuma, NielsNielsPosthumaVan Hove, MarleenMarleenVan HoveDecoutere, StefaanStefaanDecoutereMeneghesso, GaudenzioGaudenzioMeneghessoZanoni, EnricoEnricoZanoni2021-10-252021-10-2520180018-9383https://imec-publications.be/handle/20.500.12860/30301Impact of substrate resistivity on the vertical leakage, breakdown, and trapping in GaN-on-Si E-Mode HEMTsJournal articlehttps://ieeexplore.ieee.org/document/8361493