Vos, IngridIngridVosHellin, DavidDavidHellinVrancken, ChristaChristaVranckenGeypen, JefJefGeypenBender, HugoHugoBenderVecchio, EmmaEmmaVecchioParaschiv, VasileVasileParaschivVertommen, JohanJohanVertommenBoullart, WernerWernerBoullart2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/16507Interplay between dry etch and wet clean in patterning La2O3/HfO2-containing high-k/metal gate stacksProceedings paper