Record breakdown voltage (2200 V) of GaN DHFETs on Si with 2-μm buffer thickness by local substrate removal

Srivastava, PuneetPuneetSrivastavaDas, JoJoDasVisalli, DomenicaDomenicaVisalliVan Hove, MarleenMarleenVan HoveMalinowski, PawelPawelMalinowskiMarcon, DenisDenisMarconLenci, SilviaSilviaLenciGeens, KarenKarenGeensCheng, KaiKaiChengLeys, MaartenMaartenLeysDecoutere, StefaanStefaanDecoutereMertens, RobertRobertMertensBorghs, GustaafGustaafBorghs2021-10-192021-10-1920110741-3106https://imec-publications.be/handle/20.500.12860/19824Record breakdown voltage (2200 V) of GaN DHFETs on Si with 2-μm buffer thickness by local substrate removalJournal article