Polarity dependent charge trapping in thin SiO2/Al2O3 gate staks with poly-Si gate electrodes: influence of high temperature annealing

Lucci, LucaLucaLucciPantisano, LuigiLuigiPantisanoCartier, EduardEduardCartierKerber, AndreasAndreasKerberGroeseneken, GuidoGuidoGroesenekenHo, M.Y.M.Y.HoGreen, MartinMartinGreenSelmi, L.L.Selmi2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/6558Polarity dependent charge trapping in thin SiO2/Al2O3 gate staks with poly-Si gate electrodes: influence of high temperature annealingOral presentation