Demonstration of 2e12/cm-2-eV-1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5nm EOT

Gaur, AbhinavAbhinavGaurBalaji, YashwanthYashwanthBalajiLin, DennisDennisLinAdelmann, ChristophChristophAdelmannVan Houdt, JanJanVan HoudtHeyns, MarcMarcHeynsMocuta, DanDanMocutaRadu, IulianaIulianaRadu2021-10-242021-10-2420170167-9317https://imec-publications.be/handle/20.500.12860/28375Demonstration of 2e12/cm-2-eV-1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5nm EOTJournal articlehttp://www.sciencedirect.com/science/article/pii/S0167931717302034