Enhancement of the relaxation of SiGe layers by He ion implantation using a delta-Si:C layer

Buca, D.D.BucaGoryll, M.M.GoryllHollaender, B.B.HollaenderTrinkaus, H.H.TrinkausMantl, S.S.MantlLoo, RogerRogerLooNguyen, DuyDuyNguyen2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/11823Enhancement of the relaxation of SiGe layers by He ion implantation using a delta-Si:C layerOral presentation