Tunneling 1/fg noise in 5nm HfO2/2.1 nm SiO2 gate stack n-MOSFETs

Simoen, EddyEddySimoenMercha, AbdelkarimAbdelkarimMerchaPantisano, LuigiLuigiPantisanoClaeys, CorCorClaeysYoung, EdwardEdwardYoung2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/11214Tunneling 1/fg noise in 5nm HfO2/2.1 nm SiO2 gate stack n-MOSFETsJournal article