Multi-step trap-assisted tunneling in Al-doped HfO<sub>2</sub> used in advanced 2.5D metal-insulator-metal capacitors

Fohn, C.C.FohnChery, E.E.CheryCroes, K.K.CroesStucchi, M.M.StucchiAfanas'ev, V.V.Afanas'ev2025-09-012025-09-012025-AUG 20021-8979WOS:001554494100001https://imec-publications.be/handle/20.500.12860/46139Multi-step trap-assisted tunneling in Al-doped HfO<sub>2</sub> used in advanced 2.5D metal-insulator-metal capacitorsJournal article10.1063/5.0277092WOS:001554494100001LEAKAGE CURRENTCONDUCTIONMECHANISMRELIABILITYOXIDESMOS