Forksheet Field-Effect Transistors for Area Scaling and Gate-Drain Capacitance Reduction in Nanosheet-based CMOS Technologies

Mertens, HansHansMertensHoriguchi, NaotoNaotoHoriguchi2024-09-142024-09-142024979-8-3503-8308-9WOS:001223367200086https://imec-publications.be/handle/20.500.12860/44482Forksheet Field-Effect Transistors for Area Scaling and Gate-Drain Capacitance Reduction in Nanosheet-based CMOS TechnologiesProceedings paper10.1109/EDTM58488.2024.10511640979-8-3503-7152-9WOS:001223367200086