Dat, Vu KhacVu KhacDatNguyen, Minh ChienMinh ChienNguyenDuong, Hai PhuongHai PhuongDuongNgo, Tien DatTien DatNgoBaithi, MalleshMalleshBaithiDo, Van DamVan DamDoHong, ChengyunChengyunHongNguyen, Van CaoVan CaoNguyenTran, Thi UyenThi UyenTranLuong, Dinh HoaDinh HoaLuongKim, Ki KangKi KangKimLim, Seong ChuSeong ChuLimLe-Van, QuynhQuynhLe-VanYu, Woo JongWoo JongYuNguyen, Tuan DungTuan DungNguyenDuong, Ngoc ThanhNgoc ThanhDuong2026-11-022026-11-022026https://imec-publications.be/handle/20.500.12860/60694Control of carrier polarity in two-dimensional van der Waals semiconductors is essential for integrated electronic and optoelectronic systems. Here, we demonstrate that substitutional vanadium doping enables robust p-type modulation in multilayer WSe2 with pronounced thickness-dependent transport behavior. The transfer curve of V-doped transistor reveals that increasing vanadium concentration progressively enhances hole-dominant transport, in contrast to pristine WSe2, which evolves toward ambipolar and n-type conduction with increasing thickness. Leveraging this thickness-engineered of WSe2/V-WSe2 platform, we demonstrate three distinct device architectures: (i) Complementary logic inverters, (ii) flexible photovoltaic devices, and (iii) gate-programmable in-sensor imaging devices. Flexible photovoltaic homojunctions exhibit a fast response time of 1.36 µs, broadband photodetection spanning the ultraviolet to near-infrared, and a high external quantum efficiency of up to 51.3%, while maintaining stable performance under mechanical deformation. Separately, complementary inverter devices demonstrate reliable logic functionality, whereas gate-tunable homojunctions reversibly switch between negative and positive photocurrent through gate-modulated band alignment, enabling programmable in-sensor image processing. Our results establish vanadium doping as an effective strategy for carrier polarity control and for high-performance WSe2/V-WSe2-based homojunction electronic and optoelectronic devices.engTransition-metal-doped WSe homojunctions for multifunctional logic and optoelectronic devicesJournal article10.1038/s43246-026-01215-9WOS:001854676900001