Silicide induced pattern density and orientation dependent transconductance in MOS transistors

Steegen, AnAnSteegenStucchi, MicheleMicheleStucchiLauwers, A.A.LauwersMaex, KarenKarenMaex2021-10-142021-10-141999https://imec-publications.be/handle/20.500.12860/3853Silicide induced pattern density and orientation dependent transconductance in MOS transistorsProceedings paper