Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility

Driussi, F.F.DriussiEsseni, D.D.EsseniSelmi, L.L.SelmiSchmidt, M.M.SchmidtLemme, M.M.LemmeKurz, H.H.KurzBuca, D.D.BucaMantl, S.S.MantlLuysberg, M.M.LuysbergLoo, RogerRogerLooNguyen, DuyDuyNguyenReiche, M.M.Reiche2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12100Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobilityProceedings paper