Low-temperature epitaxial SiGe:P for gate-all-around n-channel metal-oxide-semiconductor devices

Fujimoto, YutaYutaFujimotoHikavyy, AndriyAndriyHikavyyPorret, ClémentClémentPorretRosseel, ErikErikRosseelRengo, GianlucaGianlucaRengoLoo, RogerRogerLoo2025-07-082024-09-292025-07-0820240021-4922WOS:001317243400001https://imec-publications.be/handle/20.500.12860/44579Low-temperature epitaxial SiGe:P for gate-all-around n-channel metal-oxide-semiconductor devicesJournal article10.35848/1347-4065/ad75daWOS:001317243400001CHEMICAL-VAPOR-DEPOSITIONSOURCE/DRAIN FORMATIONGROWTHSIFILMSTRISILANERPCVDBORON