Improvement in NBTI reliability of Si-passivated Ge/high-k/metal-gate pFETs

Kaczer, BenBenKaczerFranco, JacopoJacopoFrancoMitard, JeromeJeromeMitardRoussel, PhilippePhilippeRousselVeloso, AnabelaAnabelaVelosoGroeseneken, GuidoGuidoGroeseneken2021-10-172021-10-172009-060167-9317https://imec-publications.be/handle/20.500.12860/15557Improvement in NBTI reliability of Si-passivated Ge/high-k/metal-gate pFETsJournal article