Contact resistivity of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy

Rosseel, ErikErikRosseelPorret, ClémentClémentPorretHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooTirrito, MatteoMatteoTirritoDouhard, BastienBastienDouhardRichard, OlivierOlivierRichardHoriguchi, NaotoNaotoHoriguchiKhazaka, RamiRamiKhazaka2021-10-292021-10-292020-09https://imec-publications.be/handle/20.500.12860/35857Contact resistivity of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxyProceedings paperhttps://iopscience.iop.org/article/10.1149/09805.0037ecst/pdf