Investigation of Recombination Mechanisms in Electronic Devices Using Bias-dependent Admittance Spectroscopy Applied to CIGS Solar Cells

Brammertz, GuyGuyBrammertzScaffidi, RomainRomainScaffidiHamtaei, SarallahSarallahHamtaeiParion, JonathanJonathanParionde Wild, JessicaJessicade WildBirant, GizemGizemBirantOris, TimTimOrisMeuris, MarcMarcMeurisvan der Vleuten, MaartenMaartenvan der VleutenSimor, MarcelMarcelSimorGrynko, DmytroDmytroGrynkoNazarov, AlexeiAlexeiNazarovBlomme, RubenRubenBlommePoonkottil, NithinNithinPoonkottilDendooven, JolienJolienDendoovenFlandre, DenisDenisFlandreAernouts, TomTomAernoutsPoortmans, JefJefPoortmansVermang, BartBartVermang2025-08-172025-08-172025-AUG 51944-8244WOS:001544447000001https://imec-publications.be/handle/20.500.12860/46086Investigation of Recombination Mechanisms in Electronic Devices Using Bias-dependent Admittance Spectroscopy Applied to CIGS Solar CellsJournal article10.1021/acsami.5c09671WOS:001544447000001INTERFACE PROPERTIESTHIN-FILMSCAPACITANCEDEFECTSSTATESLAYERBULKSIMULATIONMEDLINE:40762395