A MOS capacitor model for ultra-thin 2D semiconductors: the impact of interface defects and channel resistance

Gaur, AbhinavAbhinavGaurAgarwal, TarunTarunAgarwalAsselberghs, IngeIngeAsselberghsRadu, IulianaIulianaRaduHeyns, MarcMarcHeynsLin, DennisDennisLin2021-10-282021-10-2820202053-1583https://imec-publications.be/handle/20.500.12860/35158A MOS capacitor model for ultra-thin 2D semiconductors: the impact of interface defects and channel resistanceJournal articlehttps://doi.org/10.1088/2053-1583/ab7cac