Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures

Boudier, DimitriDimitriBoudierCretu, BogdanBogdanCretuSimoen, EddyEddySimoenVeloso, AnabelaAnabelaVelosoCollaert, NadineNadineCollaert2021-10-252021-10-2520180038-1101https://imec-publications.be/handle/20.500.12860/30311Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperaturesJournal articlehttps://www.sciencedirect.com/science/article/pii/S0038110117306561