TEM characterization of extended defects induced in Si wafers by H-plasma treatment

Ghica, C.C.GhicaNistor, L.C.L.C.NistorBender, HugoHugoBenderRichard, OlivierOlivierRichardVan Tendeloo, G.G.Van TendelooUlyashin, A.A.Ulyashin2021-10-162021-10-162007-01https://imec-publications.be/handle/20.500.12860/12192TEM characterization of extended defects induced in Si wafers by H-plasma treatmentJournal article