Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2

Afanasiev, ValeriValeriAfanasievStesmans, AndreAndreStesmansDelabie, AnneliesAnneliesDelabieHoussa, MichelMichelHoussa2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/11628Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2Meeting abstract