Ge-on-insulator fabrication based on Ge-on-nothing technology

Yamamoto, KeisukeKeisukeYamamotoWang, DongDongWangLoo, RogerRogerLooPorret, ClémentClémentPorretCho, JinyounJinyounChoDessein, KristofKristofDesseinDepauw, ValerieValerieDepauw2025-06-172024-04-092025-06-1720240021-4922WOS:001195463600001https://imec-publications.be/handle/20.500.12860/43807Ge-on-insulator fabrication based on Ge-on-nothing technologyJournal article10.35848/1347-4065/ad2d07WOS:001195463600001ELECTRICAL-PROPERTIESGERMANIUMOPERATIONMOSFETS