Tunneling-lifetime model for metal-oxide-semiconductor structures

Pourghaderi, Mohammad AliMohammad AliPourghaderiMagnus, WimWimMagnusSoree, BartBartSoreeMeuris, MarcMarcMeurisDe Meyer, KristinKristinDe MeyerHeyns, MarcMarcHeyns2021-10-182021-10-1820091098-0121https://imec-publications.be/handle/20.500.12860/16050Tunneling-lifetime model for metal-oxide-semiconductor structuresJournal article